Designed primarily for electronic components, can also be used as multi-purpose sputtering equipment.
- Target utilization efficiency
High utilization efficiency of 57% is achieved by a new rotary magnet. (17.5%
improvement from our previous equipment (Cu))
- Attachment efficiency
Attachment efficiency of 51% is achieved by a 4-axis rotation jig
optimized by simulation technology.
High efficiency film forming of 29% is achieved by high target utilization
efficiency and attachment efficiency.
57% (target utilization efficiency) × 51% (attachment efficiency)
= 29% (film forming efficiency)
- Through-the-wall type
Through-the-wall type with a vertical chamber, an improvement from
the conventional flat type chamber
- Layout design focuses on maintainability
Maintenance can be performed from both the front and the back of
the equipment. This allows other equipment to be positioned next
to this equipment, making more effective use of the clean room.
- Large area inverse sputtering function
The substrate holder can contain four wafers within its 1000mm diameter.
High frequency plasma control technology with such a large area,
enables efficient impedance matching to the substrate.
||7×10-5 Pa or lower
||Within 20min to 1×10-3 Pa
||5×10-6 Pa m3 / s
|Film thickness distribution
|Film forming speed
||SiO2 : 3.2nm / min kW
|Sputtering power source
||Max. two units
selectable from DC (3kW, 6kW) and/or RF (1kW, 3kW, 5kW)
||8-inch×1 unit or 3 units
||Capable to RF 1kW
||N2 gas cooling
||Rotation jig for Φ400x4 substrates