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SHIBAURA MECHATRONICS CORPORATION
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RPA300 Remote Plasma Ashing Equipment

RPA300 Remote Plasma Ashing Equipment

Performs damage-free ashing of the resist on porous low-k film.

Features

  • Low damage ashing by remote plasma method
  • High productivity of 160 wafers/h
  • Double process chamber
  • In combination with ICE/CDE/µASH process chamber
  • Many functions (series etching/parallel etching)
  • Applicable to 300mm wafers
Equipment specifications
Material
Resist on porous low-k
Water size 300mm (200mm)
Method Downstream
Process chambers Two chambers
Discharge Microwave 2.45GHz
Transfer mechanism Mechanical transfer
Wafer temperature 250-370°C
Pressure controls APC (Throttle valve) × 2
Vacuum pumps Dry pump × 3

Process specifications
Etching rate Resist 1.2µm/min
Uniformity ≤ ±7%
Δk ≤ 0.1
Metal contamination ≤ 1 × 10E10 atoms/cm²
Particles ≥ 10 pcs/wafer (≥ 0.16µm)
Throughput
≤ 160 wafers/h

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