SHIBAURA
SHIBAURA MECHATRONICS CORPORATION
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ICE200/ICE300 Ion Chemical Etching Equipment

ICE200/ICE300 Ion Chemical Etching Equipment

High speed/Low damage etching system

Features

  • High-speed/low charging damage etching by high density/low energy plasma source
  • Low pressure process
  • High productivity rate of 160 wafers/h
  • Double process chamber
  • Many functions (series etching/parallel etching)
  • Applicable to 300mm wafers (option)
Equipment specifications
Material Low-k resist
Organic polymer low-k
Hi-Dose ion implanted resist
Via hole resist
Wafer size 200mm (300mm)
Method
Downstream with bias RF
Process chambers
Two chambers
Discharge Microwave 2.45GHz 3kW
Bias: RF 13.56MHz 500W
Transfer mechanism
Mechanical transfer
Wafer temperature
5-70°C
Pressure controls APC (Throttle valve) × 2
Vacuum pumps Turbo molecular pump × 2
Dry pump × 3

Process specifications
Gases O2 ,N2 ,CF4 ,H2 ,NH3
Etching rate Resist 2.5µm/min (25°C)
Uniformity ≤ ±5%
Metal contamination ≤ 5-1010 Atoms/cm2
Particles ≤ 20pcs/wafer (≥ 0.2µm)
Throughput ≤ 160wafers/h
Tact time ≤ 20sec/wafer

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